Electroplating electric heating tube vacuum colorful electroplating method

Electroplating electric heating tube vacuum colorful electroplating method

(1) Vacuum evaporation of vacuum colorful electroplating manufacturers: Clean the substrate to be coated and put it in the coating chamber. After evacuation, heat the film to a high temperature, so that the vapor reaches about 13.3Pa and the vapor molecules fly to the surface of the substrate and condense. form a thin film.

(2) Cathode sputtering: place the substrate to be coated on the opposite side of the cathode, pass an inert gas (such as argon) into the evacuated chamber, keep the pressure at about 1.33-13.3Pa, and then connect the cathode to a 2000V DC power supply, The glow discharge is excited, and the positively charged argon ions strike the cathode, causing it to shoot out atoms, and the sputtered atoms are deposited on the substrate through an inert atmosphere to form a film.

(3) Chemical vapor deposition: The process of obtaining a deposited film by thermally decomposing selected metal compounds or organic compounds.

(4) Ion plating: In essence, ion plating is an organic combination of vacuum evaporation and cathode sputtering, and has both process characteristics.

Electroplating electric heating tubes have higher electron mobility than positive ions

Under the action of the electric field, the positive ions generated by the discharge fly to the cathode and collide with the atoms on the target surface. The target atoms escaping from the target surface are called sputter atoms, and their energies are in the range of 1 to tens of electron volts. Sputtered atomic deposition deposits a film on the substrate. Unlike evaporative coatings, sputtered coatings are not limited by the melting point of the film, and can sputter W, Ta, C, Mo, WC, TiC and other refractory substances. The reactive sputtering method can be used to sputter compound films, that is, reactive gases (O, N, HS, CH, etc.) are added to the Ar reactive gas and its ions react with target atoms or sputtering atoms in the gas to produce compounds (such as oxides) , nitrides, etc.). ) and deposited on the substrate. The insulating film is deposited by high-frequency sputtering. The base is mounted on the ground electrode and the insulating target is mounted on the opposite electrode. One end of the high-frequency power supply is grounded, and the other end receives the electrode with the insulating target through the distribution network and the isolation DC capacitor. After the high-frequency power supply is turned on, the polarity of the high-frequency voltage changes continuously. Electrons and positive ions in the plasma hit the insulating targets at the positive and negative voltage half-cycles, respectively. Since the electron mobility is higher than that of positive ions, the insulating target surface is negatively charged, and when dynamic equilibrium is reached, the target is at a negative bias potential, allowing positive ions to continue sputtering the target. Compared with non-magnetron sputtering, magnetron sputtering can improve deposition rate by nearly an order of magnitude.

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